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Impact of Annealing Thin Films In(OH)xSy Growth By Solution Technique

100%
Mosiori C. O., Magare R., Munji M.
Path of Science
|
2017
|
vol. 3
|
issue 7
3.1-3.8
EN
Indium Hydroxy Sulphide has demonstrated abundance in resources, low prices, nontoxic characteristics, radiation resistance, high temperature resistance, and chemical stability, and therefore it has become an extremely important photoelectric, photovoltaic, and light sensing thin film material. Some treatment on this material include thermal annealing which is a process used for intrinsic stress liberation, structural improving, and surface roughness to control its electro-optical properties. In a qualitative way, annealing modifies surface morphology, intrinsic parameters, and electron mobility with temperature and time. In this work, an explanation on the surface modification of In(OH)xSy thin films when subjected to an annealing process is discussed. Both electrical and optical effects caused by annealing were carried out and characterizations were performed at different annealing temperatures in nitrogen in the temperature range 373–573 K. Using optical measurements data and simulated data, Scout software was employed and the results showed that increasing annealing temperature causes a slight decrease in transmittance with a consequence of modifying the energy band gaps values between 2.79–3.32 eV. It was concluded that annealing influence optical transmittance and resistance of the film make the thin films potential for photovoltaic, and light sensing applications.
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Electrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodes

100%
Mosiori C. O., Maera J., Shikambe R., Magare R.
Path of Science
|
2017
|
vol. 3
|
issue 6
2.8-2.16
EN
In developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature.
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