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Determination of Planck’s Constant using Light Emitting Diodes

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Mosiori C. O., Oeba D. A., Shikambe R.
Path of Science
|
2017
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vol. 3
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issue 10
2007-2012
EN
Planck’s constant is named after Max Planck, a nineteenth-century physicist who first described it by relating it as E=h where symbols have their usual meanings. It is a relationship used when comparing a quantum of energy absorbed to that emitted during electron transitions which can be extended to emission by light-emitting diodes. The purpose of this study was to determine Planck’s constant using the energy needed to excite free electrons in a light emitting diode. When a light-emitting diode is switched on, electrons recombine with holes within and release energy in the form of photons which can be determined using energy band gaps of the semiconductor composite material used to fabricate the LED. Therefore, LEDs consist of a chip of doped semiconducting layers to create a p-n junction. In LEDs, current flows easily from the p-side to the n-side but not in the reverse from electrodes with different voltages. When an electron meets a hole, it is inhaled and it falls into lower energy level releasing energy in the form of a photon. Photon emissions take place when electrons return to a lower energy state. Therefore, electrons within a LED crystal are excited to a higher energy state and any radiation emitted depends on the p-n junction direct band gap. Depending on the materials used, LEDs emit radiation with energies corresponding to either near-infrared, visible, or near-ultraviolet light. In reality, a LED is designed to have a small area (approximately less than 1 mm2). In this work, an electric current was used to excite electrons and the corresponding energy was measured using a voltmeter. Planck’s constant was calculated by substituting the obtained frequency and energy from the voltmeter in the relationship, E = hw.
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Electrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodes

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Mosiori C. O., Maera J., Shikambe R., Magare R.
Path of Science
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2017
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vol. 3
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issue 6
2.8-2.16
EN
In developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature.
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