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  1. 2 Path of Science

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  1. 2 Mosiori C. O.

  2. 1 Magare R.

  3. 1 Munji M.

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  1. 2 2017

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Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

100%
Mosiori C. O.
Path of Science
|
2017
|
vol. 3
|
issue 8
3001-3010
EN
Certain treatments done to binary CdS, such as incorporating Ni onto CdS produces ternary thin films may cause major optical parameters that have a number of applications including for solar cell device fabrication. In this paper, we report on the effect of surface passivation on the band gap and other related optical properties of CdNiS thin films. Thin films for CdxNi1-xS were prepared on glass substrates by chemical solution method. Effects of surface passivation and variation of the volume of nickel ions on the optical properties CdS hence obtaining CdxNi1-xS thin films was investigated. It was observed that the thin films hard an average Transmittance above 68 %, with reflectance below 25 % across UV-VIS-NIR region. A plot of (αhν) 2 versus hν gave energy band gap between 2.55–3.49 eV for as-grown samples and 2.82–3.50 eV for annealed samples. The passivated samples had band gap energy values within the range 2.85–3.12 eV. It was concluded that an increase in concentration of Cd2+ and Ni2+ ions in the reaction led to an increase the band gap while optical conductivity ranged between 3.78 1011–2.40 1012 S-1.
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Impact of Annealing Thin Films In(OH)xSy Growth By Solution Technique

86%
Mosiori C. O., Magare R., Munji M.
Path of Science
|
2017
|
vol. 3
|
issue 7
3.1-3.8
EN
Indium Hydroxy Sulphide has demonstrated abundance in resources, low prices, nontoxic characteristics, radiation resistance, high temperature resistance, and chemical stability, and therefore it has become an extremely important photoelectric, photovoltaic, and light sensing thin film material. Some treatment on this material include thermal annealing which is a process used for intrinsic stress liberation, structural improving, and surface roughness to control its electro-optical properties. In a qualitative way, annealing modifies surface morphology, intrinsic parameters, and electron mobility with temperature and time. In this work, an explanation on the surface modification of In(OH)xSy thin films when subjected to an annealing process is discussed. Both electrical and optical effects caused by annealing were carried out and characterizations were performed at different annealing temperatures in nitrogen in the temperature range 373–573 K. Using optical measurements data and simulated data, Scout software was employed and the results showed that increasing annealing temperature causes a slight decrease in transmittance with a consequence of modifying the energy band gaps values between 2.79–3.32 eV. It was concluded that annealing influence optical transmittance and resistance of the film make the thin films potential for photovoltaic, and light sensing applications.
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